2008

• “2D-simulation of inverted metamorphic GaInP/GaAs/GaInAs triple junction solar cell”,
  Li, Z.Q.; Xiao, Y.G.; Lestrade, M.; Li, Z.M. Simon; Photovoltaic Specialists Conference, 2008. PVSC ’08. 33rd IEEE, 2008 , Page(s): 1 – 6
• “Numerical Study of the Optical Saturation and Voltage Control of a Transistor Vertical-Cavity Surface-Emitting Laser”,
  Wei Shi; Chrostowski, L.; Faraji, B.; Photonics Technology Letters, IEEE Volume: 20 , Issue: 24, 2008 , Page(s): 2141 – 2143
• “Strain relaxation induced microphotoluminescence characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling”,
  Yu, Peichen; Chiu, C. H.; Wu, Yuh-Renn; Yen, H. H.; Chen, J. R.; Kao, C. C.; Yang, Han-Wei; Kuo, H. C.; Lu, T. C.; Yeh, W. Y.; Wang, S. C.; Applied Physics Letters; Volume: 93 , Issue: 8, 2008 , Page(s): 081110 – 081110-3
• “Polarization-dependent optical characteristics of violet InGaN laser diodes”,
  Yen, Sheng-Horng; Kuo, Yen-Kuang; Journal of Applied Physics Volume: 103 , Issue: 10, 2008 , Page(s): 103115 – 103115-6
• “Voltage controlled operation of a transistor vertical cavity surface emitting laser”,
  Wei Shi; Chrostowski, L.; Faraji, B.; Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International; 2008 , Page(s): 89 – 90
• “Laterally-corrugated ridge-waveguide distributed feedback lasers at 980 nm”,
  Laakso, A.; Viheriala, J.; Dumitrescu, M.; Tommila, J.; Haring, K.; Leinonen, T.; Ranta, S.; Pessa, M.; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD ’08. International Conference on; 2008 , Page(s): 17 – 18
• ” Fabrication and Characterization of Temperature Insensitive 660-nm Resonant-Cavity LEDs”,
  Jun-Rong Chen; Tsung-Shine Ko; Tien-Chang Lu; Yi-An Chang; Hao-Chung Kuo; Yen-Kuang Kuo; Jui-Yen Tsai; Li-Wen Laih; Shing-Chung Wang; Lightwave Technology, Journal of; Volume: 26 , Issue: 13, 2008 , Page(s): 1891 – 1900
• “Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect”,
  Brown, G. F.; Ager, J. W.; Walukiewicz, W.; Schaff, W. J.; Wu, J.; Applied Physics Letters; Volume: 93 , Issue: 26, 2008 , Page(s): 262105 – 262105-3
• “Control of optical mode distribution through etched microstructures for improved broad area laser performance”,
  Crump, P.; Leisher, P.; Matson, T.; Anderson, V.; Schulte, D.; Bell, J.; Farmer, J.; DeVito, M.; Martinsen, R.; Kim, Y. K.; Choquette, K. D.; Erbert, G.; Trankle, G.; Applied Physics Letters, Volume: 92 , Issue: 13, 2008 , Page(s): 131113 – 131113-3
• “High speed VCSELs with separated quantum wells”
  Lysak, V.V.; Safonov, I.M.; Song, Y.M.; Sukhoivanov, I.A.; Yong Tak Lee; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD ’08. International Conference on; 2008 , Page(s): 89 – 90
• ” Design optimization of GaInNAs quantum wells for long wavelength VCSEL”,
  Alias, M.S.; Maulud, M.F.; Mitani, S.; Shaari, S.; Manaf, N.; Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on; 2008 , Page(s): 311 – 315
• “Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes”,
  Jun-Rong Chen; Tsung-Shine Ko; Po-Yuan Su; Tien-Chang Lu; Hao-Chung Kuo; Yen-Kuang Kuo; Shing-Chung Wang; Lightwave Technology, Journal of; Volume: 26 , Issue: 17, 2008 , Page(s): 3155 – 3165
• “Based simulation of high gain and low breakdown voltage InGaAs/InP avalanche photodiode”,
  Lei, W.; Guo, F.M.; Lu, W.; Xiong, D.Y.; Zhu, Z.Q.; Chu, J.H.; Numerical Simulation of Optoelectronic Devices, 2008. NUSOD ’08. International Conference on; 2008 , pp. 37 – 38
• “Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells”,
  Ni, Xianfeng; Fan, Qian; Shimada, Ryoko; Ozgur, Umit; Morkoc, Hadis; Applied Physics Letters, Volume: 93 , Issue: 17, 2008 , pp. 171113 – 171113-3
• “The origin of efficiency droop in GaN-based light-emitting diodes and its solution”,
  Jong Kyu Kim; Min-Ho Kim; Schubert, M.F.; Qi Dai; Tan Sakong; Sukho Yoon; Cheolsoo Sone; Yongjo Park; Piprek, J.; Schubert, E.F.; Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on; 2008 , pp. 1 – 2
• “Study of grain boundaries influence on electrical properties of nitrides”,
  A. Szyszka, B. Paszkiewicz, R. Paszkiewicz & M. Tlaczala, Vaccum, Vol. 82, No. 10, pp. 1034-1039 (June 3 2008)
• “Effects of Built-In Polarization and Carrier Overflow on InGaN Quantum-Well Lasers With Electronic Blocking Layers”,
  Jun-Rong Chen & al., Journal of Lightwave Technology, Vol. 26, No. 3, pp. 329-337 (Feb. 1 2008)
• “Temperature behaviour of top mirror reflection spectrum in intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers”,
  A.A. Dyomin, V.V. Lysak, S.I. Petrov, Y.T. Lee & I.A. Sukhoivanov, Optics and Lasers in Engineering Volume 46, Issue 3, March 2008, pp. 211-216
• “An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study”
  J. Pakarinen, V. Polojarvi, & al. Applied Surface Science, Volume 255, Issue 5, Part 2, 30 December 2008, Pages 2985-2988
• “Characterization and optimization of high-power InGaAs/InP photodiodes”
  H. Pan; A. Beling; H. Chen ; J. C. Campbell, Optical and Quantum Electronics, Volume 40, Number 1 / January, 2008, pp. 41-46
• “Advanced InGaAs/InAlAs/InP avalanche photodiodes for high-speed detection of 1.55 µm infrared radiation”,
  Kaniewski, J.; Muszalski, J.; Piotrowski, J., Infrared Spaceborne Remote Sensing and Instrumentation XVI. Edited by Strojnik, Marija. Proceedings of the SPIE, Volume 7082, pp. 70820F-70820F-6 (2008)
• “Optical modeling of laterally-corrugated ridge-waveguide gratings”,
  A. Laakso; M. Dumitrescu; & al., Optical and Quantum Electronics, Volume 40, Numbers 11-12 / September, 2008, pp. 907-920
• “Improvement in piezoelectric effect of violet InGaN laser diodes”,
  Sheng-Horng Yen and Yen-Kuang Kuo, Optics Communications, Volume 281, Issue 18, 15 September 2008, Pages 4735-4740
• “A comparative study on single and double channel AlGaN/GaN high electron mobility transistor”,
  Jing Yao Zheng; Jenq Shinn Wu; Der Yuh Lin; Hung Ji Lin, physica status solidi (c), Volume 5 Issue 6, Pages 1944 – 1946, Special Issue: 7th International Conference on Nitride Semiconductors (ICNS-7)
• “Effect of active-layer structures on temperature characteristics of InGaN blue laser diodes”
  Han-Youl Ryu and Kyoung-Ho Ha, Optics Express, Vol. 16, Issue 14, pp. 10849-10857 (2008)
• “Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm”
  Martin F. Schubert, Frank W. Mont, & al., Optics Express, Vol. 16, Issue 8, pp. 5290-5298 (2008)

2007

• “Junction temperature and reliability of high-power flip-chip light emitting diodes”,
  Z.Z. Chen & al.; Materials Science in Semiconductor Processing, Vol. 10, Issues 4-5 (August-October 2007), pp. 206-210
• “Simulation of Intra-Cavity Contacted Oxide-Confined Vertical Cavity Surface Emitting Lasers for 10 Gb/s Ultrashort Optical Interconnections”,
  Lysak, V. & Yong-Tak Lee, 9th International Conference on Transparent Optical Networks (1-5 July 2007), Vol. 2, pp. 132-136
• “Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers”,
  Y.-K. Kuo, J.-R. Chen, M.-L. Chen & B.-T. Liou, Applied Physics B: Lasers and Optics, Volume 86, Number 4.
• “Improvement of quantum efficiency of MBE grown AlGaAs/InGaAs/GaAs edge emitting lasers by optimisation of construction and technology”,
  Kamil Kosiel, Jan Muszalski, Anna Szerling, Maciej Bugajski & Rafal Jakiela, Vol. 82, Issue 4 (12 December 2007), pp. 383-388
• “Highly efficient resonant-cavity light-emitting diodes for compact color projectors”,
  Lysak, V.V. & Lee, Y.-T., International Workshop on Optoelectronic Physics and Technology 2007 (20-22 June 2007)
• “Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes”,
  Fu Sheng-Hui, Song Guo-Feng & Chen Liang-Hui, 2007 Chinese Phys. 16 pp.817-820
• “Design and analysis of a GaAs-based 850-nm vertical-cavity surface-emitting laser with different doping in the reflection regions”,
  S. M. Mitani, P. K. Choudhury & M. S. Alias, Journal of Russian Laser Research, Vol. 28, No. 6
• “Experimental and numerical study on AlGaInAs/AlGaAs distributed feedback lasers with GaInP gratings”,
  Fu Shenghui, Song Guofeng & Chen Lianghui, Applied Physics A: Materials Science & Processing, Vol. 89, No. 4
• “Fabrication and properties of coherent-structure In-polarity InN/In_0.7Ga_0.3N multiquantum wells emitting at around 1.55 μm”,
  Song-Bek Che, Tomoyasu Mizuno, Xinqiang Wang, Yoshihiro Ishitani & Akihiko Yoshikawa, Journal of Applied Physics 102, 083539 (October 2007)
• “Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates”,
  T Swietlik & al., 2007 Semicond. Sci. Technol. 22 pp.736-741
• “Etched Micro-structures for Control of Optical Mode Distribution for Improved Broad Area Laser Performance”,
  Crump, P. & al., Optical Society of America – CLEO/QELS Conference, 6-11 May 2007
• “Investigation of violet InGaN laser diodes with normal and reversed polarizations”,
  Sheng-Horng Yen, Yen-Kuang Kuo, Meng-Lun Tsai & Ta-Cheng Hsu, Appl. Phys. Lett. / Volume 91 / Issue 20 / LASERS, OPTICS, AND OPTOELECTRONICS, 16 Nov. 2007
• “Gain and threshold properties of InGaAsN/GaAsN material system for 1.3μm semiconductor lasers”,
  Sheng-Horng Yen, Mei-Ling Chen & Yen-Kuang Kuo, Optics & Laser Technology 39 (2007), pp. 1432¨C1436
• “Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3μm semiconductor lasers”,
  Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao, Mei-Ling Chen & Bo-Ting Liou, Optics Communications Volume 275, Issue 1, 1 July 2007, pp. 156-164
• “Simulation of quantum wells with ‘spikes’ and ‘dips’ “,
  Laakso, A; Dumitrescu, M.; Toikkanen, L.; Tukiainen, A.; Rimpilainen, V.; Pessa, M., NUSOD ’07 (24-28 Sept. 2007)
• “Optical characterization of AlxGa1-xN/GaN high electron mobility transistor structures”,
  D.Y. Lin, J.D. Wu, J.Y. Zheng & C.F. Lin, Physica E: Low-dimensional Systems and Nanostructures, Volume 40, Issue 5, pp. 1763-5, 17th International Conference on Electronic Properties of Two-Dimensional Systems
• “Photoreflectance and photoluminescence investigations of two-dimensional electron gas in pseudomorphic high electron mobility transistor structures”,
  D.Y. Lin, M.C. Wu, H.J. Lin & W.L. Chen, Physica E: Low-dimensional Systems and Nanostructures Volume 40, Issue 5, pp. 1380-1382, 17th International Conference on Electronic Properties of Two-Dimensional Systems
• “Origin of efficiency droop in GaN-based light-emitting diodes”,
  Min-Ho Kim, Martin F. Schubert, Qi Dai, Jong Kyu Kim, & E. Fred Schubert, Appl. Phys. Lett. 91, 183507 (2007)
• “Simulation of deep ultraviolet light-emitting diodes”,
  Yen-Kuang Kuo & Sheng-Horng Yen, Proceedings of SPIE — Volume 6669, Seventh International Conference on Solid State Lighting (Sep. 14, 2007)
• “Numerical simulation of top-emitting organic light-emitting diodes with electron and hole blocking layers”,
  Shu-Hsuan Chang & Cheng-Hong Yang, Proceedings of SPIE — Volume 6655, Organic Light Emitting Materials and Devices XI (Oct. 16, 2007)
• “Numerical simulation of bright white multilayer organic light-emitting diodes”,
  Mei-Ling Chen, Cheng-Hong Yang, Chien-Yang Wen, Shu-Hsuan Chang & Yen-Kuang Kuo, Proceedings of SPIE — Volume 6655, Organic Light Emitting Materials and Devices XI (Oct. 16, 2007)
• “Effect of spontaneous and piezoelectric polarization on the optical characteristics of blue light-emitting diodes”,
  Yen-Kuang Kuo, Sheng-Horng Yen & Miao-Chan Tsai, Proceedings of SPIE — Volume 6669,Seventh International Conference on Solid State Lighting, 66691I (Sep. 14, 2007)
• “Modeling of GaN based resonant-cavity light-emitting diode”,
  Z. Simon Li & Z. Q. Li, Proceedings of SPIE — Volume 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860S (Feb. 13, 2007)
• “Optical properties of In_0.3Ga_0.7N/GaN green emission nanorods fabricated by plasma etching”,
  C H Chiu & al.,2007 Nanotechnology 18 335706
• “Design and properties of InGaAs/InGaAsP/InP avalanche photodiode”,
  Daniel Ha?ko – Jaroslav Kov¨¢c – Franti?ek Uherek – Jaroslava ?kriniarov – J¨¢n Jakabovic – Lor¨¢nt Peternai, Journal of Electrical Engineering, Vol. 58, No. 3, 2007, pp. 173¨C176
• “Theoretical and Experimental Analysis of Temperature-Insensitive 655-nm Resonant-Cavity LEDs”,
  Chen, Jun-Rong; Chang, Yi-An; Kuol, Hao-Chung; Lu, Tien-Chang; Kuo, Yen-Kuang; Wang, Shing-Chung; CLEO/Pacific Rim 2007, 26-31 Aug. 2007
• “Comprehensive modelling of resonant-cavity light-emitting diode”,
  Li Z. Q.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1633-1636
• “Two-dimensional simulation of GaInP/GaAs/Ge triple junction solar cell”,
  Li Z. Q.; Xiao Y. G.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1637-1640
• “Dynamic drift-diffusion simulation of InP/InGaAs SAGCM APD”,
  Xiao Y. G.; Li Z. Q.; Li Z. M. Simon, Physica status solidi. C. Current topics in solid state physics, Vol. 4, No. 5, pp. 1641-1645
• “Modeling of resonant cavity enhanced separate absorption charge and multiplication avalanche photodiodes by Crosslight APSYS”,
  Y. G. Xiao, Z. Q. Li, and Z. M. Simon Li, Proceedings of SPIE — Volume 6660, Infrared Systems and Photoelectronic Technology II, (Sep. 12, 2007)
• “Modeling of Si-based solar cells with V-grooved surface texture by Crosslight APSYS”,
  Y. G. Xiao, M. Lestrade, Z. Q. Li, and Z. M. S. Li , Proceedings of SPIE — Volume 6651, Photovoltaic Cell and Module Technologies, (Sep. 11, 2007)

2006

• “Avalanche photodiode with sectional InGaAsP/InP charge layer”,
  D. Haško, J. Kováč, F. Uherek, J. Škriniarová, J. Jakabovič & L. Peternai, Microelectronics Journal,Volume 37, Issue 6, June 2006, pp. 483-6
• “3D Simulations on Realistic GaN-Based Light-Emitting Diodes”,
  Simon Li, Z.Q. Li, O. Shmatov, C.S. Xia, W. Lu, Materials Research Society, Paper #: 0892-FF12-12.
• “Modeling of multi-junction solar cells by Crosslight APSYS”,
  Li, Z. Q.; Xiao, Y. G.; Li, Z. M. Simon, High and Low Concentration for Solar Electric Applications. Proceedings of the SPIE, Volume 6339, pp. 633909 (2006).
• “Red Light Vertical-Cavity Surface-Emitting Lasers”,
  ZHANG Yan, PENG Biao, LIU Guang-yu, SUN Yah-fang, LI Te & CUI Jin-jiang; OME Information Vol. 12 (2006), pp.27-34
• “Top mirror optimization of high-speed intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers”,
  V. V. Lysak, Ki Soo Chang & Y.T. Lee, Journal of Optoelectronics and Advanced Materials, Vol. 8, No. 1, February 2006, pp. 355-358
• “Structure optimization of high speed intracavity-contacted oxide-confined VCSELs”,
  V.V. Lysak & Y.T.Lee, Joint International Conference on Optical Internet and Next Generation Network (2006)
• “Accurate modelling of InGaN quantum wells”,
  Hans Wenzel, Optical and Quantum Electronics, Vol. 38, No. 12-14 / Sep. 2006
• “Optimization of Barrier Structure for Strain-Compensated Multiple-Quantum-Well AlGaInP Laser Diodes”,
  Man-Fang Huang & Yu-Lung Sun, Japanese Journal of Applied Physics Vol. 45, No. 10A, 2006, pp. 7600-7604.
• “Study of quantum and short-channel effects for sub-50nm FINFETS,”
  Wei-Da HU, Xiao-Shuang CHEN, Zhi-Jue QUAN, Xu-Chang ZHOU and Wei LU, Journal of Infrared and Millimeter Waves, vol. 25, No. 2, p. 90-94, 2006
• “High-power distributed feedback laser diodes emitting at 820 nm,”
  Shenghui FU, Yuan Zhong, Guofeng Song, Lianghui Chen, Chinese Journal of Semiconductors, vol. 27, No. 6, p. 966-969, 2006.
• “Effects of Built-In Polarization on InGaN-GaN Vertical-Cavity Surface-Emitting Lasers,”
  Joachim Piprek, Robert Farrell, Steve DenBaars, and Shuji Nakamura, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 1, JANUARY 1, 2006, p.7
• “A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling“,
  H. Wenzel, R. G¨¹ther, A. M. Shams-Zadeh-Amiri, Member, IEEE, and P. Bienstman, IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006, p. 64
• Man-Fang Huang, Member, IEEE, and Tsung-Hung Lu, ”
  Optimization of the Active-Layer Structure forthe Deep-UV AlGaN Light-Emitting Diodes,”
  IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 8, AUGUST 2006, p. 820
• H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park,
  “Highly stable temperature characteristics of InGaN blue laser diodes”,
  APPLIED PHYSICS LETTERS 89, 031122 (2006)
• O. Douheret, K. Maknys and S. Anand,
  “Electrical Characterisation of III-V Buried Heterostructure Lasers by Scanning Capacitance Microscopy”,
  in NATO Science Series, Volume 186, Springer Netherlands, 2006, Pages 413-424
• Christoph Wachter,
  “INTEGRATED OPTICS DESIGN: SOFTWARE TOOLS AND DIVERSIFIED APPLICATIONS“,
  in NATO Science Series II: Mathematics, Physics and Chemistry Frontiers in Planar Lightwave Circuit Technology, Design, Simulation, and Fabrication, Siegfried Janz, Jiri Ctyroky and Stoyan Tanev, ed., Springer Netherlands 2006
• Yi-An Chang, Sheng-Horng Yen, Te-Chung Wang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang,
  “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes,”
  Semicond. Sci. Technol. 21 No 5 (May 2006) 598-603
• Yow-Jon Lin and Yow-Lin Chu,
  “Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique,”
  Semicond. Sci. Technol. 21 No 8 (August 2006) 1172-117
• D. Y. Lin, W. C. Lin, and J. J. Shiu,
  “Optical study of the AlGaN/GaN high electron mobility transistor structures,”
  Phys. Stat. Sol. (a) 203, No. 7, 1856-1860 (2006)
• Yen-Kuang KUO, Shang-Wei HSIEH and Hsiu-Fen CHEN,
  “Numerical Study on Optimization of Active Regions for um AlGaInAs and InGaAsN Material Systems”,
  Japanese Journal of Applied Physics, Vol. 45, No. 3A, 2006, pp. 1588-1590
• Bao-Jen Pong, Chi-Hsing Chen, Sheng-Horng Yen, Jin-Fu Hsu, Chun-Ju Tun, Yen-Kuang Kuo, Cheng-Huang Kuo, Gou-Chung Chi,
  “Abnormal blue shift of InGaN micro-size light emitting diodes”,
  Solid-State Electronics 50 (2006) 1588-159
• Takashi Kyonoa, Hideki Hirayama, Katsushi Akita, Takao Nakamura, Masahiro Adachi and Koshi Ando,
  “Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates”,
  JOURNAL OF APPLIED PHYSICS 99, 114509 (2006)
• I. Ahmad, V. Kasisomayajula, D. Y. Song, L. Tian, J. M. Berg, and M. Holtz,
  “Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations”,
  JOURNAL OF APPLIED PHYSICS 100, 113718 (2006)
• Joachim Piprek,
  “GaN-based Devices: Physics and Simulation”,
  Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006,
  paper MA2
• S.-H. Yen, B.J. Chen, Y.-K. Kuo,
  “Simulation of InGaN Violet and Ultraviolet Multiple-Quantum-Well Laser Diodes”,
  Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006,
  paper MC1
• C. S. Xia, W. Lu, Z. M. Simon Li, Z. Q. Li,
  “Simulation of InGaN/GaN multiple quantum well light emitting diodes with Quantum Dot electrical and optical effects”,
  Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006,
  paper MC3
• Y. Sheng, O. Shmatov, Z. M. Simon Li,
  “3D Simulation of InGaN/GaN Micro-Ring Light-Emitting Diodes,”
  Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006,
  paper MC5
• M. Nadir,
  “First and second order DFB lasers with GaInNAs-GaAs quantum-well”,
  Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore, 11-14 Sept. 2006, paper TuP9
• I.-S. Chung, Y. T. Lee,
  “Modeling of distributed Bragg reflectors for current crowding simulation in intracavity-contacted VCSEL”,
  Proc. 6th Inter. Conf. on Numerical Simulation of Optoelectronic Devices, NUSOD’06, Singapore,
  11-14 Sept. 2006, paper WB3
• Sheng-Horng Yen, Bo-Jean Chen, Mei-Ling Chen, Yen-Kuang Kuo, Yi-An Chang, and Hao-Chung Kuo,
  “Fabrication and simulation of ultraviolet AlGaInN light-emitting diodes“,
  Light-Emitting Diodes: Research, Manufacturing, and Applications X, edited by Klaus P. Streubel, H.
  Walter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340N-1 (2006)
• Shu-Hsuan Chang, Yung-Cheng Chang, Cheng-Hong Yang, Jun-Rong Chen, Yen-Kuang Kuo,
  “Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education”,
  Light-Emitting Diodes: Research, Manufacturing, and Applications X,
  edited by Klaus P. Streubel, H. Walter Yao, E. Fred Schubert, Proc. of SPIE Vol. 6134, 61340R-1 (2006)
• Y. G. Xiao, Z. Q. Li, Z. M. Simon Li,
  “Modeling of avalanche photodiodes by Crosslight APSYS”,
  Infrared and Photoelectronic Imagers and Detector Devices II, edited by Randolph E. Longshore, Ashok Sood, Proc. of SPIE Vol. 6294, 62940Z-1 (2006)
• Z.Q. Li, Alfred K. M. Lam, and Z. Simon Li,
  “Analysis of a Surface-normal Coupled-Quantum-Well Modulator at 1.55 μm“,
  Physics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611508-1 (2006)
• Yen-Kuang Kuo, Sheng-Horng Yen, Ming-Wei Yao,
  “Optimization study on active layers and optical performance for 1.3-um AlGaInAs and InGaNAs semiconductor lasers”,
  Physics and Simulation of Optoelectronic Devices XIV, edited by Marek Osinski, Fritz Henneberger, Yasuhiko Arakawa, Proc. of SPIE Vol. 6115, 611526-1 (2006)
• Yen-Kuang Kuo, Sheng-Horng Yen, Jun-Rong Chen,
  “Numerical simulation of AlInGaN ultraviolet light-emitting diodes”
  Optoelectronic Devices: Physics, Fabrication, and Application III, edited by Joachim Piprek, Jian Jim Wang, Proceedings of SPIE Vol. 6368, 636812 (2006)
• H. Wenzel, R. G¨¹ther, A. M. Shams-Zadeh-Amiri and P. Bienstman,
  “A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling”,
  IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 1, JANUARY 2006,p. 64
• Yi-An Chang, Sheng-Horng Yen, Te-ChungWang, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu and Shing-Chung Wang,
  “Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes“,
  Semicond. Sci. Technol. 21 (2006) 598-603
• Yow-Jon Lin1 and Yow-Lin Chu,
  “Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique”,
  Semicond. Sci. Technol. 21 (2006) 1172-1175
• Yi-An Chang, Tsung-Shine Ko, Jun-Rong Chen2, Fang-I Lai,Chun-Lung Yu, I-Tsung Wu, Hao-Chung Kuo,Yen-Kuang Kuo, Li-Wen Laih, Li-Horng Laih, Tin-Chang Lu and Shing-Chung Wang,
  “The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers”,
  Semicond. Sci. Technol. 21 (2006) 1488-1494
• Shang-Wei Hsieh and Yen-Kuang Kuo,
  “A numerical study on characteristic temperature of short-cavity 1.3-um AlGaInAs/InP MQW lasers”,
  Applied Physics A: Materials Science & Processing, Volume 82, Number 2